MARTINES, GIOVANNI
MARTINES, GIOVANNI
DIPARTIMENTO DI INGEGNERIA ELETTRICA ED ELETTRONICA
Electronic Components Authentication via Physical Analysis
2023-01-01 Mura, G.; Carta, S.; Ricci, P. C.; Martines, G.
Reliability risks from counterfeit electronics
2022-01-01 Mura, Giovanna; Martines, Giovanni
Analysis of Fake Amplifiers
2021-01-01 Mura, G.; Murru, R.; Martines, G.
Analysis of counterfeit electronics
2020-01-01 Mura, G.; Murru, R.; Martines, G.
Further improvements of an extended Hakki-Paoli method
2018-01-01 Vanzi, M.; Mura, G.; Martines, G.
Clamp voltage and ideality factor in laser diodes
2015-01-01 Vanzi, Massimo; Mura, Giovanna; Marcello, Giulia; Martines, Giovanni
Ultra-low voltage, self-aligned OTFTs for frequency applications
2013-01-01 Lai, Stefano; Cosseddu, P; Gazzadi G., C; Martines, Giovanni; Bonfiglio, A; Barbaro, Massimo
External cavity ITLA degradation
2012-01-01 Mura, Giovanna; Vanzi, Massimo; Martines, Giovanni; T., Tomasi; R., Cao; M., Marongiu
DC parameters for laser diodes from experimental curves
2011-01-01 Vanzi, Massimo; Mura, Giovanna; Martines, Giovanni
A novel approach to determine the start-up conditions in microwave negative impedance oscillator design
2007-01-01 Monni, M; Martines, Giovanni
An automated lifetest equipment for optical emitters
2002-01-01 Giglio, M; Martines, Giovanni; Mura, Giovanna; Podda, Simona; Vanzi, Massimo
A global approach to the noise and small-signal characterization of microwave field-effect transistors
2001-01-01 Caddemi, A; Martines, Giovanni
A simpler method for life-testing laser diodes
1999-01-01 Vanzi, Massimo; Martines, Giovanni; Bonfiglio, Annalisa; Licheri, M; Darco, R; Salmini, G; DE PALO, R.
DC, low frequency and RF drift in AlGaAs/InGaAs PM-HEMTs biased in high field and high power dissipation regime
1998-01-01 Meneghesso, G; Paccagnella, A; Martines, Giovanni; Garat, F; Crosato, C; Zanoni, E.
Failure mechanisms of Schottky gate contact degradation and deep traps creation in AlGaAs/InGaAs PM-HEMT submitted to accelerated life tests
1998-01-01 G., Menghesso; G., Crosato; C., Garat; Martines, Giovanni; G., Paccagnella; E., Zanoni
Failure mechanisms of Schottky gate contact degradation and deep traps creation in AlGaAs/InGaAs PM-HEMT’s submitted to accelerated life tests
1998-01-01 Meneghesso, G; Crosato, C; Garat, F; Martines, Giovanni; Paccagnella, A; Zanoni, E.
Charge diffusion and reciprocity theorems: A direct approach to EBIC of ridge laser diodes
1996-01-01 F., Magistrali; G., Salmini; Martines, Giovanni; Vanzi, Massimo
Noisy characterization for CAD-oriented modeling of a pseudomorphic HEMT series versus frequency and temperature
1996-01-01 A., Caddemi; Martines, Giovanni; M., Sannino
Proposal of up-to-date standards on methods of measuring noise in linear two-ports
1994-01-01 Martines, Giovanni; Sannino, M.
The determination of noise, gain and scattering parameters of microwave transistors (HEMTs) using only an automatic noise figure test-set
1994-01-01 Martines, Giovanni; M., Sannino