MARTINES, GIOVANNI

MARTINES, GIOVANNI  

DIPARTIMENTO DI INGEGNERIA ELETTRICA ED ELETTRONICA  

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Risultati 1 - 20 di 48 (tempo di esecuzione: 0.0 secondi).
Titolo Data di pubblicazione Autore(i) Rivista Editore
Electronic Components Authentication via Physical Analysis 1-gen-2023 Mura, G.; Carta, S.; Ricci, P. C.; Martines, G. - -
Reliability risks from counterfeit electronics 1-gen-2022 Mura, Giovanna; Martines, Giovanni - IEEE
Analysis of Fake Amplifiers 1-gen-2021 Mura, G.; Murru, R.; Martines, G. - IEEE
Analysis of counterfeit electronics 1-gen-2020 Mura, G.; Murru, R.; Martines, G. MICROELECTRONICS RELIABILITY -
Further improvements of an extended Hakki-Paoli method 1-gen-2018 Vanzi, M.; Mura, G.; Martines, G. MICROELECTRONICS RELIABILITY -
Clamp voltage and ideality factor in laser diodes 1-gen-2015 Vanzi, Massimo; Mura, Giovanna; Marcello, Giulia; Martines, Giovanni MICROELECTRONICS RELIABILITY -
Ultra-low voltage, self-aligned OTFTs for frequency applications 1-gen-2013 Lai, Stefano; Cosseddu, P; Gazzadi G., C; Martines, Giovanni; Bonfiglio, A; Barbaro, Massimo MRS PROCEEDINGS Materials Research Society
External cavity ITLA degradation 1-gen-2012 Mura, Giovanna; Vanzi, Massimo; Martines, Giovanni; T., Tomasi; R., Cao; M., Marongiu - -
DC parameters for laser diodes from experimental curves 1-gen-2011 Vanzi, Massimo; Mura, Giovanna; Martines, Giovanni MICROELECTRONICS RELIABILITY Elsevier
A novel approach to determine the start-up conditions in microwave negative impedance oscillator design 1-gen-2007 Monni, M; Martines, Giovanni - Horizon House Publications Ltd
An automated lifetest equipment for optical emitters 1-gen-2002 Giglio, M; Martines, Giovanni; Mura, Giovanna; Podda, Simona; Vanzi, Massimo MICROELECTRONICS RELIABILITY -
A global approach to the noise and small-signal characterization of microwave field-effect transistors 1-gen-2001 Caddemi, A; Martines, Giovanni - World Scientific
A simpler method for life-testing laser diodes 1-gen-1999 Vanzi, Massimo; Martines, Giovanni; Bonfiglio, Annalisa; Licheri, M; Darco, R; Salmini, G; DE PALO, R. MICROELECTRONICS RELIABILITY Elsevier science
DC, low frequency and RF drift in AlGaAs/InGaAs PM-HEMTs biased in high field and high power dissipation regime 1-gen-1998 Meneghesso, G; Paccagnella, A; Martines, Giovanni; Garat, F; Crosato, C; Zanoni, E. - -
Failure mechanisms of Schottky gate contact degradation and deep traps creation in AlGaAs/InGaAs PM-HEMT submitted to accelerated life tests 1-gen-1998 G., Menghesso; G., Crosato; C., Garat; Martines, Giovanni; G., Paccagnella; E., Zanoni MICROELECTRONICS RELIABILITY -
Failure mechanisms of Schottky gate contact degradation and deep traps creation in AlGaAs/InGaAs PM-HEMT’s submitted to accelerated life tests 1-gen-1998 Meneghesso, G; Crosato, C; Garat, F; Martines, Giovanni; Paccagnella, A; Zanoni, E. - -
Charge diffusion and reciprocity theorems: A direct approach to EBIC of ridge laser diodes 1-gen-1996 F., Magistrali; G., Salmini; Martines, Giovanni; Vanzi, Massimo - Materials Park
Noisy characterization for CAD-oriented modeling of a pseudomorphic HEMT series versus frequency and temperature 1-gen-1996 A., Caddemi; Martines, Giovanni; M., Sannino - Research Signpost
Proposal of up-to-date standards on methods of measuring noise in linear two-ports 1-gen-1994 Martines, Giovanni; Sannino, M. - -
The determination of noise, gain and scattering parameters of microwave transistors (HEMTs) using only an automatic noise figure test-set 1-gen-1994 Martines, Giovanni; M., Sannino IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES -