We report absorption measurements in the vacuum ultraviolet (VUV) spectral region on Ge-doped silica samples grown through chemical vapor deposition (CVD) and fiber preforms grown through modified chemical vapor deposition (MCVD) with GeO2 doping concentration from 0.3 to 4.0 mol%. We observed in all spectra an absorption band at 5.15 eV and a structure at about 7.0 eV. We observed differences in the absorption spectrum between Ge-doped silica samples and fiber preforms in the shape and relative amplitude of optical absorption bands. The intensity of defect-related bands depends on the Ge concentration and distribution. Differences in Ge concentration and distribution are due to the preparation methods and growing conditions
Absorption spectrum of Ge-doped silica samples and fiber preforms in the vacuum ultraviolet region
ANEDDA, ALBERTO;CARBONARO, CARLO MARIA;CORPINO, RICCARDO;
2001-01-01
Abstract
We report absorption measurements in the vacuum ultraviolet (VUV) spectral region on Ge-doped silica samples grown through chemical vapor deposition (CVD) and fiber preforms grown through modified chemical vapor deposition (MCVD) with GeO2 doping concentration from 0.3 to 4.0 mol%. We observed in all spectra an absorption band at 5.15 eV and a structure at about 7.0 eV. We observed differences in the absorption spectrum between Ge-doped silica samples and fiber preforms in the shape and relative amplitude of optical absorption bands. The intensity of defect-related bands depends on the Ge concentration and distribution. Differences in Ge concentration and distribution are due to the preparation methods and growing conditions
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