Time-resolved pump-and-probe measurements were performed in the strong excitation regime of semiconductor microcavities containing quantum wells. The fundamental quantum well exciton and the cavity mode were resonant or slightly detuned, while the energy of the laser photons was chosen to be close to the energy of the photon-like polariton. The semiconductor microcavities were high finesse heterostructures made of GaAs/GaAlAs layers, featuring cavity-mode line widths of at most 0.7 meV.
Features of strong coherent excitation of microcavities containing quantum wells
QUOCHI, FRANCESCO;BONGIOVANNI, GIOVANNI LUIGI CARLO;MURA, ANTONIO ANDREA;SABA, MICHELE
1999-01-01
Abstract
Time-resolved pump-and-probe measurements were performed in the strong excitation regime of semiconductor microcavities containing quantum wells. The fundamental quantum well exciton and the cavity mode were resonant or slightly detuned, while the energy of the laser photons was chosen to be close to the energy of the photon-like polariton. The semiconductor microcavities were high finesse heterostructures made of GaAs/GaAlAs layers, featuring cavity-mode line widths of at most 0.7 meV.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
I metadati presenti in IRIS UNICA sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono protetti da diritto d'autore, salvo diversa indicazione.
