ZnSe-GaAs(001) heterostructures have been grown by molecular beam epitaxy and characterized in situ by means of reflection high energy electron diffraction and x-ray photoemission spectroscopy, and ex-situ by near edge photoluminescence spectroscopy and by cross sectional transmission electron microscopy. By changing the Zn/Se flux intensity ratio we were able to control the Zn/Se relative concentration in the interface region, while maintaining a similar structure and high degree of long range order of the interface.

Local interface composition and band offset tuning in ZnSe-GaAs(001) heterostructures

MULA, GUIDO;MURA, ANTONIO ANDREA;
1994

Abstract

ZnSe-GaAs(001) heterostructures have been grown by molecular beam epitaxy and characterized in situ by means of reflection high energy electron diffraction and x-ray photoemission spectroscopy, and ex-situ by near edge photoluminescence spectroscopy and by cross sectional transmission electron microscopy. By changing the Zn/Se flux intensity ratio we were able to control the Zn/Se relative concentration in the interface region, while maintaining a similar structure and high degree of long range order of the interface.
Band structure, Electron diffraction, Emission spectroscopy, Epitaxial growth, Heterojunctions, Molecular beam epitaxy, Semiconducting films, Transmission electron microscopy
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11584/10991
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