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EnglishZnSe-GaAs(001) heterostructures have been grown by molecular beam epitaxy and characterized in situ by means of reflection high energy electron diffraction and x-ray photoemission spectroscopy, and ex-situ by near edge photoluminescence spectroscopy and by cross sectional transmission electron microscopy. By changing the Zn/Se flux intensity ratio we were able to control the Zn/Se relative concentration in the interface region, while maintaining a similar structure and high degree of long range order of the interface.
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| Titolo: | Local interface composition and band offset tuning in ZnSe-GaAs(001) heterostructures | |
| Autori: | ||
| Data di pubblicazione: | 1994 | |
| Rivista: | ||
| Abstract: | ZnSe-GaAs(001) heterostructures have been grown by molecular beam epitaxy and characterized in situ by means of reflection high energy electron diffraction and x-ray photoemission spectroscopy, and ex-situ by near edge photoluminescence spectroscopy and by cross sectional transmission electron microscopy. By changing the Zn/Se flux intensity ratio we were able to control the Zn/Se relative concentration in the interface region, while maintaining a similar structure and high degree of long range order of the interface. | |
| Handle: | http://hdl.handle.net/11584/10991 | |
| Tipologia: | 4.1 Contributo in Atti di convegno |
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