ZnSe-GaAs(001) heterostructures have been grown by molecular beam epitaxy and characterized in situ by means of reflection high energy electron diffraction and x-ray photoemission spectroscopy, and ex-situ by near edge photoluminescence spectroscopy and by cross sectional transmission electron microscopy. By changing the Zn/Se flux intensity ratio we were able to control the Zn/Se relative concentration in the interface region, while maintaining a similar structure and high degree of long range order of the interface.

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Titolo: Local interface composition and band offset tuning in ZnSe-GaAs(001) heterostructures
Autori: 
MULA, GUIDO
MURA, ANTONIO ANDREA
mostra contributor esterni 
Data di pubblicazione: 1994
Rivista: 
MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS  
Abstract: ZnSe-GaAs(001) heterostructures have been grown by molecular beam epitaxy and characterized in situ by means of reflection high energy electron diffraction and x-ray photoemission spectroscopy, and ex-situ by near edge photoluminescence spectroscopy and by cross sectional transmission electron microscopy. By changing the Zn/Se flux intensity ratio we were able to control the Zn/Se relative concentration in the interface region, while maintaining a similar structure and high degree of long range order of the interface.
Handle: http://hdl.handle.net/11584/10991
Tipologia:4.1 Contributo in Atti di convegno

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