A new universal full-directional SiC-GaN-based two-phase DC-DC converter has been recently introduced. It is supposed to replace with DC-DC battery charger and DC-DC traction drive converters in Plug-In Electric Vehicles. The SiC-GaN-based converter is designed to have the advantage of low switching power loss of GaN in hard-switching application and also avoid a high number of paralleled phases for high power multi-phase DC-DC converter applications. Especially in this paper, a dead-time analysis is done for the state-of-the-art high power GaN and SiC components of the proposed converter. To this aim, a new Spice-based simulation method is presented to obtain precise dead-time power loss calculations. Furthermore, the effect of negative OFF gate-source voltage is investigated.

Dead-Time Analysis of a Universal SiC-GaN-Based DC-DC Converter for Plug-In Electric Vehicles

Moradpour Milad
Primo
;
Serpi Alessandro;Gatto Gianluca
Ultimo
2018-01-01

Abstract

A new universal full-directional SiC-GaN-based two-phase DC-DC converter has been recently introduced. It is supposed to replace with DC-DC battery charger and DC-DC traction drive converters in Plug-In Electric Vehicles. The SiC-GaN-based converter is designed to have the advantage of low switching power loss of GaN in hard-switching application and also avoid a high number of paralleled phases for high power multi-phase DC-DC converter applications. Especially in this paper, a dead-time analysis is done for the state-of-the-art high power GaN and SiC components of the proposed converter. To this aim, a new Spice-based simulation method is presented to obtain precise dead-time power loss calculations. Furthermore, the effect of negative OFF gate-source voltage is investigated.
2018
978-1-5090-6683-4
Dead-time; Gallium Nitride; Silicon Carbide; DCDC converter; Plug-in electric vehicles
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11584/254308
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