The paper will describe a new photodetector based on a metal-organic semiconductor material sensitive to the near IR region of the lectromagnetic spectrum. The detector has a planar metal-semiconductor-metal structure with the active material deposited from liquid phase over a quartz substrate. Together with the fabrication process and the time response to light pulses, emphasis will be given to the intrinsic wavelength selectivity of the semiconductor material, of about 100nm around its peak sensitivity. The ease of deposition may enable to directly develop optical devices on passive optical component or on lectronic subsrates.
Hybrid metal-organic photodetectors based on a new class of metal-dithiolenes
Arca M.;Denotti C.;
2002-01-01
Abstract
The paper will describe a new photodetector based on a metal-organic semiconductor material sensitive to the near IR region of the lectromagnetic spectrum. The detector has a planar metal-semiconductor-metal structure with the active material deposited from liquid phase over a quartz substrate. Together with the fabrication process and the time response to light pulses, emphasis will be given to the intrinsic wavelength selectivity of the semiconductor material, of about 100nm around its peak sensitivity. The ease of deposition may enable to directly develop optical devices on passive optical component or on lectronic subsrates.
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