A thorough understanding of Er-doping of porous silicon (PSi) is mandatory to improve the efficiency of PSi:Er-based devices for light emission. In this work, the voltage transient at the first stages of constant current Er doping is studied as a function of the current intensity. Two very different transient shapes are evidenced, and a correlation with electrochemical impedance spectroscopy, optical reflectivity and chemical analysis, together with an interpretative model, is proposed.
Voltage transitory effects and the effectiveness of the Er doping of porous silicon
MULA, GUIDO;MASCIA, MICHELE;PALMAS, SIMONETTA;FALQUI, ANDREA
2014-01-01
Abstract
A thorough understanding of Er-doping of porous silicon (PSi) is mandatory to improve the efficiency of PSi:Er-based devices for light emission. In this work, the voltage transient at the first stages of constant current Er doping is studied as a function of the current intensity. Two very different transient shapes are evidenced, and a correlation with electrochemical impedance spectroscopy, optical reflectivity and chemical analysis, together with an interpretative model, is proposed.
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