Since their discovery carbon nanotubes have attracted much interest for their peculiar electronic properties which go from metalic to semiconducting behaviour, depending both on diameter and chirality. The exact vaue of their band gap is obviously a crucial point to be addressed because it enters in the nanotube application as microelectronic devices. By making use of an efficient GW scheme, previousy tested on bulk systems, as well as of a model screening function, we obtained for the first time excitation energies and band-gap vaues for carbon nanotubes. Results for (6,0) and (7,0) will be presented and discussed.

Self-Energy corrections to DFT-LDA Gaps of Realistic Carbon Nanotubes

CAPPELLINI, GIANCARLO;CASULA, FRANCESCO
2002

Abstract

Since their discovery carbon nanotubes have attracted much interest for their peculiar electronic properties which go from metalic to semiconducting behaviour, depending both on diameter and chirality. The exact vaue of their band gap is obviously a crucial point to be addressed because it enters in the nanotube application as microelectronic devices. By making use of an efficient GW scheme, previousy tested on bulk systems, as well as of a model screening function, we obtained for the first time excitation energies and band-gap vaues for carbon nanotubes. Results for (6,0) and (7,0) will be presented and discussed.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11584/99249
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