Optical gain performance of epitaxially-grown nanostructured para-sexiphenyl films is demonstrated to be outstanding. The combination of high structural order and low lattice temperature results in a material system with ultrawide (ca. 1 eV) gain bandwidth and long (ca. 1 ns) gain lifetime (see figure) that allows an optimistic outlook for broadband laser applications.

Optical gain performance of epitaxially grown para-sexiphenyl films

QUOCHI, FRANCESCO;SABA, MICHELE;MURA, ANTONIO ANDREA;BONGIOVANNI, GIOVANNI LUIGI CARLO
2007-01-01

Abstract

Optical gain performance of epitaxially-grown nanostructured para-sexiphenyl films is demonstrated to be outstanding. The combination of high structural order and low lattice temperature results in a material system with ultrawide (ca. 1 eV) gain bandwidth and long (ca. 1 ns) gain lifetime (see figure) that allows an optimistic outlook for broadband laser applications.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11584/100420
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