Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures

Electronic transport in semiconductors that possess high internal spontaneous and piezoelectric polarization opens up a new field of pyroelectronics and pyrosensors. The pyroelectric character of group-III-nitrides with wurtzite crystal structure yields a novel degree of freedom in designing and tailoring devices for modern micro- and nanoelectronic applications. Furthermore, spontaneous and piezoelectric polarization induced surface and interface charges can be used to develop very sensitive but robust sensors for the detection of ions, gases and polar liquids. We present a review of both theoretical and experimental studies of spontaneous and piezoelectric polarization present in AlGaN/GaN heterostructures as well as the electronic transport properties of polarization induced two-dimensional electron gases which are formed at the AlGaN/GaN interface due to the difference in the total polarization of two adjacent III-nitride layers. We demonstrate that the two-dimensional electron gases (2DEGs) achieved without modulation doping are very suitable as channel of high electron mobility transistors optimally suited for high power and high frequency applications (PART A) as well as for various kinds of sensors which can be operated in harsh environments (PART B).