Electrochemical etching formation mechanisms of porous gallium phosphide are investigated under different conditions. Anodic etching of single crystalline n-type GaP was performed in H2SO4 0.5 M aqueous solution both under dark condition and by shining the samples with the 351 nm line of an Argon laser. Different reaction mechanisms are found as evidenced by the analysis of the current-voltage characteristics. Moreover, a dependence of the porosity on the laser power density is detected. A quantitative estimate of the porosity is given by studying the Fröhlich modes through micro Raman Spectroscopy.
Photo-electrochemical formation of porous GaP
RICCI, PIER CARLO;ANEDDA, ALBERTO;CARBONARO, CARLO MARIA;CHIRIU, DANIELE;CORPINO, RICCARDO
2005-01-01
Abstract
Electrochemical etching formation mechanisms of porous gallium phosphide are investigated under different conditions. Anodic etching of single crystalline n-type GaP was performed in H2SO4 0.5 M aqueous solution both under dark condition and by shining the samples with the 351 nm line of an Argon laser. Different reaction mechanisms are found as evidenced by the analysis of the current-voltage characteristics. Moreover, a dependence of the porosity on the laser power density is detected. A quantitative estimate of the porosity is given by studying the Fröhlich modes through micro Raman Spectroscopy.
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