We present ab initio density-functional calculations for acceptors, donors, and native defects in aluminum nitride, showing that acceptors are deeper (Be similar to 0.25 eV, Mg similar to 0.45 eV) and less soluble than in GaN; at further variance with GaN, both the extrinsic donors Si-Al and C-Al, and the native donor V-N (the anion vacancy) are found to be deep (about 1 to 3 eV below the conduction). We thus predict that doped AlN will generally turn out to be semi-insulating in the normally achieved Al-rich conditions, in agreement with the known doping difficulties of high-x AlxGa1-xN alloys.
Theoretical evidence for the semi-insulating character of AlN
BERNARDINI, FABIO;FIORENTINI, VINCENZO
1999-01-01
Abstract
We present ab initio density-functional calculations for acceptors, donors, and native defects in aluminum nitride, showing that acceptors are deeper (Be similar to 0.25 eV, Mg similar to 0.45 eV) and less soluble than in GaN; at further variance with GaN, both the extrinsic donors Si-Al and C-Al, and the native donor V-N (the anion vacancy) are found to be deep (about 1 to 3 eV below the conduction). We thus predict that doped AlN will generally turn out to be semi-insulating in the normally achieved Al-rich conditions, in agreement with the known doping difficulties of high-x AlxGa1-xN alloys.
I metadati presenti in IRIS UNICA sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono protetti da diritto d'autore, salvo diversa indicazione.
