Organic thin film transistors have been fabricated on plastic substrates using a combination of two ultrathin insulating films, namely a 6 nm Al2O3 film (grown by UV-Ozone treatment of a pre-deposited aluminium film) and a 25 nm parylene C film deposited by vapour phase, as gate dielectric. They show a very low leakage current density, around 2109 A/cm2, and, most importantly, can be operated at voltages below 1V. We demonstrate that this low-cost technique is highly reproducible and represents a step forward for the routine fabrication of ultra-low voltage plastic electronics.

Ultra-low voltage, organic thin film transistors fabricated on plastic substrates by a highly reproducible process

COSSEDDU, PIERO;LAI, STEFANO;BARBARO, MASSIMO;BONFIGLIO, ANNALISA
2012-01-01

Abstract

Organic thin film transistors have been fabricated on plastic substrates using a combination of two ultrathin insulating films, namely a 6 nm Al2O3 film (grown by UV-Ozone treatment of a pre-deposited aluminium film) and a 25 nm parylene C film deposited by vapour phase, as gate dielectric. They show a very low leakage current density, around 2109 A/cm2, and, most importantly, can be operated at voltages below 1V. We demonstrate that this low-cost technique is highly reproducible and represents a step forward for the routine fabrication of ultra-low voltage plastic electronics.
2012
Insulating film; Low-leakage current; Organic thin film transistors; Parylene C; Plastic electronics; Plastic substrates; Ultra-thin; Ultralow voltage; UV-ozone treatment; Vapour-phase
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11584/104241
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