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EnglishBy means of large-scale molecular dynamics simulations we provide a thorough atomic-scale picture of boron incorporation in crystalline silicon upon solid-phase epitaxy. The present results show that boron can either be incorporated as a substitutional dopant or form clusters with a low content of silicon self-interstitials. A full characterization of the formation process of boron-interstitial clusters and their stoichiometry is presented. The present results are consistent with available experimental information and also provide a deep physical insight into B-doped silicon solid-phase epitaxy.
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| Titolo: | Boron ripening during solid-phase epitaxy of amorphous silicon | |
| Autori: | ||
| Data di pubblicazione: | 2004 | |
| Rivista: | ||
| Abstract: | By means of large-scale molecular dynamics simulations we provide a thorough atomic-scale picture of boron incorporation in crystalline silicon upon solid-phase epitaxy. The present results show that boron can either be incorporated as a substitutional dopant or form clusters with a low content of silicon self-interstitials. A full characterization of the formation process of boron-interstitial clusters and their stoichiometry is presented. The present results are consistent with available experimental information and also provide a deep physical insight into B-doped silicon solid-phase epitaxy. | |
| Handle: | http://hdl.handle.net/11584/12642 | |
| Tipologia: | 1.1 Articolo in rivista |
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