Atomistic study of the dissolution of small boron interstitial clusters in c-Si

Cogoni, M.; Mattoni, A.; Uberuaga, B. P.; Voter, A. F.; Colombo, Luciano

doi:10.1063/1.2130385

The dissolution of boron-interstitial clusters (BICs) in crystalline silicon, often formed after ion implantation, is investigated by temperature accelerated dynamics of their formation using the Si–B Stillinger-Weber potential. We find that the dominant breakup event for small BICs is the emission of either Si mono- or di-interstitials, though the dominant reaction for the reactivation of boron is via emission of a boron interstitial defect B1I1. Most reactions are well approximated by the assumption that they are diffusion limited. Finally, the rate limiting step for breakup of clusters with three B atoms involves the B3I2 cluster, which also dissolves via emission of B1I1.

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Titolo:	Atomistic study of the dissolution of small boron interstitial clusters in c-Si
Autori:	M. COGONI A. MATTONI B. P. UBERUAGA A. F. VOTER COLOMBO, LUCIANO mostra contributor esterni nascondi contributor esterni
Data di pubblicazione:	2005
Rivista:	APPLIED PHYSICS LETTERS
Abstract:	The dissolution of boron-interstitial clusters (BICs) in crystalline silicon, often formed after ion implantation, is investigated by temperature accelerated dynamics of their formation using the Si–B Stillinger-Weber potential. We find that the dominant breakup event for small BICs is the emission of either Si mono- or di-interstitials, though the dominant reaction for the reactivation of boron is via emission of a boron interstitial defect B1I1. Most reactions are well approximated by the assumption that they are diffusion limited. Finally, the rate limiting step for breakup of clusters with three B atoms involves the B3I2 cluster, which also dissolves via emission of B1I1.
Handle:	http://hdl.handle.net/11584/15663
Tipologia:	1.1 Articolo in rivista

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