The dissolution of boron-interstitial clusters (BICs) in crystalline silicon, often formed after ion implantation, is investigated by temperature accelerated dynamics of their formation using the Si–B Stillinger-Weber potential. We find that the dominant breakup event for small BICs is the emission of either Si mono- or di-interstitials, though the dominant reaction for the reactivation of boron is via emission of a boron interstitial defect B1I1. Most reactions are well approximated by the assumption that they are diffusion limited. Finally, the rate limiting step for breakup of clusters with three B atoms involves the B3I2 cluster, which also dissolves via emission of B1I1.

Atomistic study of the dissolution of small boron interstitial clusters in c-Si

COLOMBO, LUCIANO
2005

Abstract

The dissolution of boron-interstitial clusters (BICs) in crystalline silicon, often formed after ion implantation, is investigated by temperature accelerated dynamics of their formation using the Si–B Stillinger-Weber potential. We find that the dominant breakup event for small BICs is the emission of either Si mono- or di-interstitials, though the dominant reaction for the reactivation of boron is via emission of a boron interstitial defect B1I1. Most reactions are well approximated by the assumption that they are diffusion limited. Finally, the rate limiting step for breakup of clusters with three B atoms involves the B3I2 cluster, which also dissolves via emission of B1I1.
Boron-interstitial clusters; Silicon; Accelerated MD
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11584/15663
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