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EnglishWe discuss about computer experiments based on nonequilibrium molecular dynamics simulations providing evidence that thermal rectification can be obtained in bulk Si by a non-uniform distribution of defects. We consider a graded population of both Ge substitutional defects and nanovoids, distributed along the direction of an applied thermal bias, and predict a rectification factor comparable to what is observed in other low-dimensional Si-based nanostructures. By considering several defect distribution profiles, thermal bias conditions, and sample sizes, the present results suggest that a possible way for tuning the thermal rectification is by defect engineering
| Titolo: | Thermal rectification in silicon by a graded distribution of defects |
| Autori: | |
| Data di pubblicazione: | 2016 |
| Rivista: | |
| Handle: | http://hdl.handle.net/11584/174584 |
| Tipologia: | 1.1 Articolo in rivista |
File in questo prodotto:
| File | Descrizione | Tipologia | Licenza | |
|---|---|---|---|---|
| 1.4953142.pdf | versione editoriale | Open Access Visualizza/Apri |
http://hdl.handle.net/11584/174584
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