Strong correlation and ferromagnetism in (Ga,Mn)As and (Ga,Mn)N

The band energies of the ferromagnetic diluted magnetic semiconductors (Ga,Mn)As and (Ga,Mn)N are calculated using a self-interaction-free approach which describes covalent and strongly correlated electrons without adjustable parameters. Both materials are half-metallic, although the contribution of Mn-derived d states to the bands around the Fermi energy is very different in the two cases. In (Ga,Mn)As the bands are strongly p-d hybridized, with a dominance of As p states. In contrast in (Ga,Mn)N the Fermi energy lies within three flat bands of mainly d character that are occupied by two electrons. Thus the Mn ion in (Ga,Mn)N behaves as a deep trap acceptor, with the hole at 1.39 eV above the GaN valence band top, and is in excellent agreement with the experimental data.