Based on a new general class [M(R,R'timdt)2] of neutral dithiolenes, an innovative photodetector has been developed. By casting the organic material onto an opportunely configured quartz substrate a planar metal-semiconductor-metal structure has been obtained. Thanks to the strikingly intense absorption in the near infrared of these compounds, the device photoconductivity is enhanced when the irradiating wavelength belongs to this region of the spectrum. The device therefore acts as an intrinsically wavelenth-selective photodetector.
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