Magnetophotoluminescence measurements show that the electron effective mass and the exciton radius in hydrogen irradiated GaAs1-xNx vary continuously as a function of the hydrogen dose until they recover the values of N-free GaAs. First-principles calculations account for the experimental findings through the formation of a specific N-dihydrogen complex, which leads to the removal of the electron localization caused by N incorporation into GaAs.
Tunable variation of the electron effective mass and exciton radius in hydrogenated GaAs1-xNx
FIORENTINI, VINCENZO;
2004-01-01
Abstract
Magnetophotoluminescence measurements show that the electron effective mass and the exciton radius in hydrogen irradiated GaAs1-xNx vary continuously as a function of the hydrogen dose until they recover the values of N-free GaAs. First-principles calculations account for the experimental findings through the formation of a specific N-dihydrogen complex, which leads to the removal of the electron localization caused by N incorporation into GaAs.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
