Intentionally produced inversion domain boundaries in GaN have been reported to be highly efficient shallow recombination centers. This letter report a rationale for this phenomenon based on ab initio density-functional calculations. A model is also proposed, based on the existence of polarization in GaN, of the observation that a domain boundary acts as a rectifying junction under voltage applied between the two opposite-polarity surfaces. (C) 2003 American Institute of Physics.
Origin of the efficient light emission from inversion domain boundaries in GaN
FIORENTINI, VINCENZO
2003-01-01
Abstract
Intentionally produced inversion domain boundaries in GaN have been reported to be highly efficient shallow recombination centers. This letter report a rationale for this phenomenon based on ab initio density-functional calculations. A model is also proposed, based on the existence of polarization in GaN, of the observation that a domain boundary acts as a rectifying junction under voltage applied between the two opposite-polarity surfaces. (C) 2003 American Institute of Physics.
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