Silicon photonics is emerging as a key technology for developing radiation-tolerant optical transceivers. In this work, we present the electro-optical characterization of two radiation-hardened shallow-etched Mach-Zehnder modulators with different doping configurations when exposed to 1.2 Grad(SiO2) total ionizing dose. The trade-offs between radiation hardness and nominal performance metrics are highlighted to provide insights for optimizing SiPh devices for high-energy physics applications.
Testing silicon photonic Mach–Zehnder modulators versus total ionizing dose
Pintus, Paolo;
2024-01-01
Abstract
Silicon photonics is emerging as a key technology for developing radiation-tolerant optical transceivers. In this work, we present the electro-optical characterization of two radiation-hardened shallow-etched Mach-Zehnder modulators with different doping configurations when exposed to 1.2 Grad(SiO2) total ionizing dose. The trade-offs between radiation hardness and nominal performance metrics are highlighted to provide insights for optimizing SiPh devices for high-energy physics applications.
File in questo prodotto:
| File | Dimensione | Formato | |
|---|---|---|---|
|
2024_NIMPR-a_Testing silicon photonic Mach–Zehnder modulators versus total ionizing dose.pdf
accesso aperto
Descrizione: Articolo principale
Tipologia:
versione editoriale (VoR)
Dimensione
795.99 kB
Formato
Adobe PDF
|
795.99 kB | Adobe PDF | Visualizza/Apri |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
