We numerically investigate the potential of Al2O3:Er3+ active slot waveguides for realizing small-form factor lasers on silicon on insulator at 2.8 um. Based on recent technological improvements in the reliable and low-cost fabrication of alumina doped with high Er3+ concentration and exploiting the extremely high field intensity achievable in optimized active slot waveguides, we point out the possibility of realizing silicon-compatible emitters at 2.8 um, optically pumped at 1480 nm with a few milliwatts threshold pump power. A strong potential impact can be envisaged for chemical sensing, biosensing and lab-on-a-chip applications.
Integrated 2.8 µm laser source in Al2O3:Er3+ slot waveguide on SOI
PINTUS, Paolo;
2011-01-01
Abstract
We numerically investigate the potential of Al2O3:Er3+ active slot waveguides for realizing small-form factor lasers on silicon on insulator at 2.8 um. Based on recent technological improvements in the reliable and low-cost fabrication of alumina doped with high Er3+ concentration and exploiting the extremely high field intensity achievable in optimized active slot waveguides, we point out the possibility of realizing silicon-compatible emitters at 2.8 um, optically pumped at 1480 nm with a few milliwatts threshold pump power. A strong potential impact can be envisaged for chemical sensing, biosensing and lab-on-a-chip applications.
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