We present here a reflection high-energy electron diffraction study of the (0 0 1)CdTe growing surface during molecular beam epitaxy. The presence of additional weakly bound Te atoms adsorbed on top of the Te dimers terminating the surface during the growth is demonstrated. The coverage of these weakly bound Te atoms is strongly dependent on the growth conditions (temperature and strain). The resulting surface stoichiometry variations have a significant effect on the CdTe growth rate and on the incorporation mechanisms of Cd and Te atoms.

Influence of a compressive strain on the stoichiometry of the (0 0 1)CdTe surface during molecular beam epitaxy

MULA, GUIDO;
1999-01-01

Abstract

We present here a reflection high-energy electron diffraction study of the (0 0 1)CdTe growing surface during molecular beam epitaxy. The presence of additional weakly bound Te atoms adsorbed on top of the Te dimers terminating the surface during the growth is demonstrated. The coverage of these weakly bound Te atoms is strongly dependent on the growth conditions (temperature and strain). The resulting surface stoichiometry variations have a significant effect on the CdTe growth rate and on the incorporation mechanisms of Cd and Te atoms.
1999
CdTe; compressive strain; RHEED
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11584/4832
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