We present here a reflection high-energy electron diffraction study of the (0 0 1)CdTe growing surface during molecular beam epitaxy. The presence of additional weakly bound Te atoms adsorbed on top of the Te dimers terminating the surface during the growth is demonstrated. The coverage of these weakly bound Te atoms is strongly dependent on the growth conditions (temperature and strain). The resulting surface stoichiometry variations have a significant effect on the CdTe growth rate and on the incorporation mechanisms of Cd and Te atoms.
Influence of a compressive strain on the stoichiometry of the (0 0 1)CdTe surface during molecular beam epitaxy
MULA, GUIDO;
1999-01-01
Abstract
We present here a reflection high-energy electron diffraction study of the (0 0 1)CdTe growing surface during molecular beam epitaxy. The presence of additional weakly bound Te atoms adsorbed on top of the Te dimers terminating the surface during the growth is demonstrated. The coverage of these weakly bound Te atoms is strongly dependent on the growth conditions (temperature and strain). The resulting surface stoichiometry variations have a significant effect on the CdTe growth rate and on the incorporation mechanisms of Cd and Te atoms.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
I metadati presenti in IRIS UNICA sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono protetti da diritto d'autore, salvo diversa indicazione.
