We present a study on the growth of hexagonal and cubic GaN. In particular, the effect of the presence of Mg atoms on the surface has been analyzed. The samples have been studied by means of Reflection High Energy Electron Diffraction, Photoluminescence and optical microscopy. A remarkable change in the growth kinetics is observed for the hexagonal phase, where the presence of Mg atoms on the growing surface induces a deep hollow in the growth rate as a function of the Ga flux. The cubic phase seems to be less sensitive to the presence of Mg atoms, and we observed only an increase of the growth rate in the N-rich regime. A model for the behavior observed in the hexagonal phase is proposed.
Mg-induced kinetical changes in the growth of cubic and hexagonal GaN by molecular beam epitaxy
MULA, GUIDO;
1999-01-01
Abstract
We present a study on the growth of hexagonal and cubic GaN. In particular, the effect of the presence of Mg atoms on the surface has been analyzed. The samples have been studied by means of Reflection High Energy Electron Diffraction, Photoluminescence and optical microscopy. A remarkable change in the growth kinetics is observed for the hexagonal phase, where the presence of Mg atoms on the growing surface induces a deep hollow in the growth rate as a function of the Ga flux. The cubic phase seems to be less sensitive to the presence of Mg atoms, and we observed only an increase of the growth rate in the N-rich regime. A model for the behavior observed in the hexagonal phase is proposed.
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