We demonstrate that the growth mode of GaN, AlN and InN in molecular beam epitaxy is two or three dimensional, depending on the competing kinetics of the metal species (Ga, Al or In) and of N. In this view, we show that the presence of foreign species acting as surfactants profoundly modifies the kinetics of the adatoms, eventually leading to an improvement in both structural and optical properties of the material. Next, we discuss the interplay between the growth mode and the strain relaxation in nitride heterostructures. In particular, we show that GaN and InGaN can experience a Stranski-Krastanov growth mode leading to the formation of quantum dots. A mechanism of quantum dot nucleation is proposed in the case of GaN on AIN.
Molecular beam epitaxy of GaN, AlN, InN and related alloys: from 2D to 3D growth mode
MULA, GUIDO;
2000-01-01
Abstract
We demonstrate that the growth mode of GaN, AlN and InN in molecular beam epitaxy is two or three dimensional, depending on the competing kinetics of the metal species (Ga, Al or In) and of N. In this view, we show that the presence of foreign species acting as surfactants profoundly modifies the kinetics of the adatoms, eventually leading to an improvement in both structural and optical properties of the material. Next, we discuss the interplay between the growth mode and the strain relaxation in nitride heterostructures. In particular, we show that GaN and InGaN can experience a Stranski-Krastanov growth mode leading to the formation of quantum dots. A mechanism of quantum dot nucleation is proposed in the case of GaN on AIN.
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