UNICA IRIS Institutional Research Information System
IRIS è il sistema di gestione integrata dei dati della ricerca (persone, progetti, pubblicazioni, attività) adottato dall'Università degli Studi di Cagliari dal mese di luglio 2015.
EnglishThe influence of Mg on the growth kinetics of GaN deposited by plasma-assisted molecular-beam epitaxy has been studied. It has been found that surface diffusion and/or the residence time of both N and Ga were drastically influenced by the presence of Mg on the surface. This leads to an abrupt phase transition from a low-mobility state to a high mobility state for the Ga atoms onto the surface when increasing the Ga/N flux ratio above a critical value. A Ga droplet density has been evaluated by a simple nucleation model, and found to be in agreement with experimental observations.
Scheda prodotto non validato
Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo
http://hdl.handle.net/11584/4951| Titolo: | Mg-modified surface kinetics of the GaN growth by molecular beam epitaxy, |
| Autori interni: | MULA, GUIDO |
| Data di pubblicazione: | 2000 |
| Rivista: | PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS |
| Abstract: | The influence of Mg on the growth kinetics of GaN deposited by plasma-assisted molecular-beam epitaxy has been studied. It has been found that surface diffusion and/or the residence time of both N and Ga were drastically influenced by the presence of Mg on the surface. This leads to an abrupt phase transition from a low-mobility state to a high mobility state for the Ga atoms onto the surface when increasing the Ga/N flux ratio above a critical value. A Ga droplet density has been evaluated by a simple nucleation model, and found to be in agreement with experimental observations. |
| Handle: | http://hdl.handle.net/11584/4951 |
| Tipologia: | 1.1 Articolo in rivista |
File in questo prodotto:
Copyright © 2017