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EnglishWe propose a tunable laser diode based on a piezoelectric heterostructure. The tuning mechanism consists of modulating the gain spectrum during lasing by the quantum-confined Stark effect. The modulating electric field is produced by carrier separation in the active region, and its amplitude depends on the injected carrier density. In a proof-of-principle photopumped experiment, we were able to generate a space-charge field of 20 kV/cm which shifted the lasing wavelength by more than 3 nm in the 800 nm spectral region.
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| Titolo: | Tunable piezoelectric semiconductor laser controlled by the carrier injection level | |
| Autori: | ||
| Data di pubblicazione: | 2000 | |
| Rivista: | ||
| Abstract: | We propose a tunable laser diode based on a piezoelectric heterostructure. The tuning mechanism consists of modulating the gain spectrum during lasing by the quantum-confined Stark effect. The modulating electric field is produced by carrier separation in the active region, and its amplitude depends on the injected carrier density. In a proof-of-principle photopumped experiment, we were able to generate a space-charge field of 20 kV/cm which shifted the lasing wavelength by more than 3 nm in the 800 nm spectral region. | |
| Handle: | http://hdl.handle.net/11584/4952 | |
| Tipologia: | 1.1 Articolo in rivista |
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