It is shown that under specific growth conditions the strain relaxation of GaN deposited on AlN obeys the Stranski-Krastanov mechanism. As a consequence, it is demonstrated that, for both cubic and hexagonal phases, the growth of self-organized three-dimensional islands can be achieved. These islands behave as quantum dots, exhibiting optical properties dominated by localization effects.
Self-assembled GaN quantum dots grown by plasma-assisted molecular beam epitaxy
MULA, GUIDO;
2001-01-01
Abstract
It is shown that under specific growth conditions the strain relaxation of GaN deposited on AlN obeys the Stranski-Krastanov mechanism. As a consequence, it is demonstrated that, for both cubic and hexagonal phases, the growth of self-organized three-dimensional islands can be achieved. These islands behave as quantum dots, exhibiting optical properties dominated by localization effects.
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