It is shown that under specific growth conditions the strain relaxation of GaN deposited on AlN obeys the Stranski-Krastanov mechanism. As a consequence, it is demonstrated that, for both cubic and hexagonal phases, the growth of self-organized three-dimensional islands can be achieved. These islands behave as quantum dots, exhibiting optical properties dominated by localization effects.
Self-assembled GaN quantum dots grown by plasma-assisted molecular beam epitaxy
MULA, GUIDO;
2001-01-01
Abstract
It is shown that under specific growth conditions the strain relaxation of GaN deposited on AlN obeys the Stranski-Krastanov mechanism. As a consequence, it is demonstrated that, for both cubic and hexagonal phases, the growth of self-organized three-dimensional islands can be achieved. These islands behave as quantum dots, exhibiting optical properties dominated by localization effects.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
I metadati presenti in IRIS UNICA sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono protetti da diritto d'autore, salvo diversa indicazione.
