Self-assembled cubic GaN quantum dots have been grown by plasma-assisted molecular-beam epitaxy on cubic AlN. Atomic force microscopy and transmission electron microscopy reveal islands of a mean height of 1.6 nm and a mean diameter of 13 nm. The influence of stacking faults on island nucleation is discussed. The quantum dots show ultraviolet photo- and cathodo-luminescence with no thermal quenching up to room temperature.

Growth and characterization of self-assembled cubic quantum dots

MULA, GUIDO;
2001

Abstract

Self-assembled cubic GaN quantum dots have been grown by plasma-assisted molecular-beam epitaxy on cubic AlN. Atomic force microscopy and transmission electron microscopy reveal islands of a mean height of 1.6 nm and a mean diameter of 13 nm. The influence of stacking faults on island nucleation is discussed. The quantum dots show ultraviolet photo- and cathodo-luminescence with no thermal quenching up to room temperature.
self-assembled; quantum dots; GaN; PA-MBE
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11584/5485
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