We investigate the growth modes for GaN homoepitaxy. Several parameters have been taken into account: the growth rate, the metal/N ratio value and the substrate temperature. The observation of time variation of the RHEED diffraction pattern and the study of thick samples has permitted the determination of a phase diagram of the Ga surface coverage during GaN homoepitaxy as a function of III/V ratio and substrate temperature. Furthermore, we address the different GaN surface morphologies obtained in different regions of the phase diagram.

Molecular beam epitaxy of GaN: a phase diagram

MULA, GUIDO;
2001

Abstract

We investigate the growth modes for GaN homoepitaxy. Several parameters have been taken into account: the growth rate, the metal/N ratio value and the substrate temperature. The observation of time variation of the RHEED diffraction pattern and the study of thick samples has permitted the determination of a phase diagram of the Ga surface coverage during GaN homoepitaxy as a function of III/V ratio and substrate temperature. Furthermore, we address the different GaN surface morphologies obtained in different regions of the phase diagram.
GaN; morphology; phase diagram; MBE
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11584/5488
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