We demonstrate that, depending on substrate temperature, exposure of cubic or hexagonal GaN, AlN or AlGaN surface to Ga leads to the formation of a self-regulated film. Subsequent exposure to N flux leads to the growth of a discrete quantity of GaN. This atomic layer epitaxy process can be repeated several times, allowing for the controlled growth of QWs or QDs.
Atomic layer epitaxy of hexagonal and cubic GaN nanostructures
MULA, GUIDO;
2001-01-01
Abstract
We demonstrate that, depending on substrate temperature, exposure of cubic or hexagonal GaN, AlN or AlGaN surface to Ga leads to the formation of a self-regulated film. Subsequent exposure to N flux leads to the growth of a discrete quantity of GaN. This atomic layer epitaxy process can be repeated several times, allowing for the controlled growth of QWs or QDs.
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