We show that a dynamically stable Ga film is formed on (0001) AlN in a large range of Ga fluxes at a substrate temperature of 740 °C. This feature allows for atomic layer epitaxy (ALE) of GaN on AlN by alternate exposure to Ga and N flux. We show that, at a growth temperature of 740 °C, one ALE cycle leads to the formation of a two-dimensional GaN layer, whereas further cycles lead to the formation of GaN quantum dots following a Stranski–Krastanov growth mode. This behavior is confirmed by atomic force microscopy, transmission electron microscopy, and cathodoluminescence.

Atomic-layer epitaxy of GaN quantum wells and quantum dots on (0001) AlN

MULA, GUIDO
2002

Abstract

We show that a dynamically stable Ga film is formed on (0001) AlN in a large range of Ga fluxes at a substrate temperature of 740 °C. This feature allows for atomic layer epitaxy (ALE) of GaN on AlN by alternate exposure to Ga and N flux. We show that, at a growth temperature of 740 °C, one ALE cycle leads to the formation of a two-dimensional GaN layer, whereas further cycles lead to the formation of GaN quantum dots following a Stranski–Krastanov growth mode. This behavior is confirmed by atomic force microscopy, transmission electron microscopy, and cathodoluminescence.
atomic layer epitaxy; GaN; quantum dots; quantum wells
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11584/5492
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