The Ga surface coverage during the growth of GaN by plasma-assisted molecular-beam epitaxy (PAMBE) has been systematically studied by reflection high-energy electron diffraction as a function of the Ga flux and the substrate temperature. As a consequence, a diagram is depicted, which describes the Ga surface coverage during PAMBE as function of growth conditions. In particular, we show that a region exists in this diagram, in which the Ga surface coverage is independent of fluctuations in the Ga flux or the substrate temperature and which forms a ‘‘growth window’’ for GaN growth. The influence of the Ga surface coverage on the GaN surface morphology and the growth kinetics is discussed.
Dynamically stable gallium surface coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN
MULA, GUIDO;
2002-01-01
Abstract
The Ga surface coverage during the growth of GaN by plasma-assisted molecular-beam epitaxy (PAMBE) has been systematically studied by reflection high-energy electron diffraction as a function of the Ga flux and the substrate temperature. As a consequence, a diagram is depicted, which describes the Ga surface coverage during PAMBE as function of growth conditions. In particular, we show that a region exists in this diagram, in which the Ga surface coverage is independent of fluctuations in the Ga flux or the substrate temperature and which forms a ‘‘growth window’’ for GaN growth. The influence of the Ga surface coverage on the GaN surface morphology and the growth kinetics is discussed.
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