The growth of GaN quantum dot multilayers embedded in an AlN matrix can be controlled using the Stranski–Krastanov mode. For samples grown in the wurtzite structure, we present a non-destructive statistical investigation of the quantum dot shape, size and correlation, in both lateral and vertical directions using grazing incidence small angle X-ray scattering. In surface plane, the adjustment of the measurement leads to values for the size and the inter-dot distance that are consistent with direct characterization. In the vertical direction, the correlation length is quantified and shows the perfect vertical alignment of the dots.
Structure and ordering of GaN quantum dot multilayer investigated by X-ray grazing incidence techniques
MULA, GUIDO
2002-01-01
Abstract
The growth of GaN quantum dot multilayers embedded in an AlN matrix can be controlled using the Stranski–Krastanov mode. For samples grown in the wurtzite structure, we present a non-destructive statistical investigation of the quantum dot shape, size and correlation, in both lateral and vertical directions using grazing incidence small angle X-ray scattering. In surface plane, the adjustment of the measurement leads to values for the size and the inter-dot distance that are consistent with direct characterization. In the vertical direction, the correlation length is quantified and shows the perfect vertical alignment of the dots.I metadati presenti in IRIS UNICA sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono protetti da diritto d'autore, salvo diversa indicazione.



