The effect of the image-potential perturbation on the direct and inverse angle-resolved normal photoemission is evaluated for semiconductor surfaces, from the effective-mass equation using a classical dielectric picture. For the Si(1, 1, 1) and GaAs(1, 1, 0) surfaces, in inverse photoemission, shifts of the order of tens of meV are evaluated for the first peak in the final photon yields.

Estimate of image-potential perturbation on the normal inverse and direct photoemission yelds

CAPPELLINI, GIANCARLO;
1991

Abstract

The effect of the image-potential perturbation on the direct and inverse angle-resolved normal photoemission is evaluated for semiconductor surfaces, from the effective-mass equation using a classical dielectric picture. For the Si(1, 1, 1) and GaAs(1, 1, 0) surfaces, in inverse photoemission, shifts of the order of tens of meV are evaluated for the first peak in the final photon yields.
electronic properties
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11584/5941
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