The effect of the image-potential perturbation on the direct and inverse angle-resolved normal photoemission is evaluated for semiconductor surfaces, from the effective-mass equation using a classical dielectric picture. For the Si(1, 1, 1) and GaAs(1, 1, 0) surfaces, in inverse photoemission, shifts of the order of tens of meV are evaluated for the first peak in the final photon yields.
Estimate of image-potential perturbation on the normal inverse and direct photoemission yelds
CAPPELLINI, GIANCARLO;
1991-01-01
Abstract
The effect of the image-potential perturbation on the direct and inverse angle-resolved normal photoemission is evaluated for semiconductor surfaces, from the effective-mass equation using a classical dielectric picture. For the Si(1, 1, 1) and GaAs(1, 1, 0) surfaces, in inverse photoemission, shifts of the order of tens of meV are evaluated for the first peak in the final photon yields.
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