We present a model for the dielectric function of semiconductors. It has been tested successfully for Si, Ge, GaAs, and ZnSe. In conjunction with the single plasmon-pole approximation it yields plasmonenergy dispersions in fair agreement with experiments. It allows one, moreover, to deduce an analytical expression for the Coulomb-hole part of the static self-energy operator.

Model dielectric function for semiconductors

CAPPELLINI, GIANCARLO;
1993

Abstract

We present a model for the dielectric function of semiconductors. It has been tested successfully for Si, Ge, GaAs, and ZnSe. In conjunction with the single plasmon-pole approximation it yields plasmonenergy dispersions in fair agreement with experiments. It allows one, moreover, to deduce an analytical expression for the Coulomb-hole part of the static self-energy operator.
electronic properties
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11584/5944
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