We present a model for the dielectric function of semiconductors. It has been tested successfully for Si, Ge, GaAs, and ZnSe. In conjunction with the single plasmon-pole approximation it yields plasmonenergy dispersions in fair agreement with experiments. It allows one, moreover, to deduce an analytical expression for the Coulomb-hole part of the static self-energy operator.
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Titolo: | Model dielectric function for semiconductors |
Autori: | |
Data di pubblicazione: | 1993 |
Rivista: | |
Abstract: | We present a model for the dielectric function of semiconductors. It has been tested successfully for Si, Ge, GaAs, and ZnSe. In conjunction with the single plasmon-pole approximation it yields plasmonenergy dispersions in fair agreement with experiments. It allows one, moreover, to deduce an analytical expression for the Coulomb-hole part of the static self-energy operator. |
Handle: | http://hdl.handle.net/11584/5944 |
Tipologia: | 1.1 Articolo in rivista |
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