We report on the modification in the density of states of a multi-quantum well system of InGaN/GaN-based light emitting diodes. The modification was induced by dc current stress at I = 50 mA (current density J = 55 A cm−2) with stress times up to 100 h. The samples were characterized by means of current–voltage and capacitance–voltage, and photocurrent spectroscopy at different stress stages. We observed a progressive redistribution of the conduction band charge in the multi-quantum well system, along with a modification of the shape of the photocurrent spectrum.

Redistribution of multi-quantum well states induced by current stress in InxGa1−xN/GaN light-emitting diodes

BASIRICO', LAURA;
2009-01-01

Abstract

We report on the modification in the density of states of a multi-quantum well system of InGaN/GaN-based light emitting diodes. The modification was induced by dc current stress at I = 50 mA (current density J = 55 A cm−2) with stress times up to 100 h. The samples were characterized by means of current–voltage and capacitance–voltage, and photocurrent spectroscopy at different stress stages. We observed a progressive redistribution of the conduction band charge in the multi-quantum well system, along with a modification of the shape of the photocurrent spectrum.
2009
QUANTUM WELL; GAN; LED
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11584/74690
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