We report on the modification in the density of states of a multi-quantum well system of InGaN/GaN-based light emitting diodes. The modification was induced by dc current stress at I = 50 mA (current density J = 55 A cm−2) with stress times up to 100 h. The samples were characterized by means of current–voltage and capacitance–voltage, and photocurrent spectroscopy at different stress stages. We observed a progressive redistribution of the conduction band charge in the multi-quantum well system, along with a modification of the shape of the photocurrent spectrum.
Redistribution of multi-quantum well states induced by current stress in InxGa1−xN/GaN light-emitting diodes
BASIRICO', LAURA;
2009-01-01
Abstract
We report on the modification in the density of states of a multi-quantum well system of InGaN/GaN-based light emitting diodes. The modification was induced by dc current stress at I = 50 mA (current density J = 55 A cm−2) with stress times up to 100 h. The samples were characterized by means of current–voltage and capacitance–voltage, and photocurrent spectroscopy at different stress stages. We observed a progressive redistribution of the conduction band charge in the multi-quantum well system, along with a modification of the shape of the photocurrent spectrum.
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