A non-volatile memory element based on organic/inorganic nanocomposites is presented. The device can be operated in ambient conditions, showing high retention time and long-term life time. The formation/rupture of metallic filaments in the organic matrix is investigated by HR-XPS and ToF-SIMS analysis, and is demonstrated to be the driving mechanism for the resistive switching.
Air-stable, non-volatile resistive memory based on hybrid organic/inorganic nanocomposites
CASULA, GIULIA;COSSEDDU, PIERO;BONFIGLIO, ANNALISA
2015-01-01
Abstract
A non-volatile memory element based on organic/inorganic nanocomposites is presented. The device can be operated in ambient conditions, showing high retention time and long-term life time. The formation/rupture of metallic filaments in the organic matrix is investigated by HR-XPS and ToF-SIMS analysis, and is demonstrated to be the driving mechanism for the resistive switching.
File in questo prodotto:
| File | Dimensione | Formato | |
|---|---|---|---|
|
paper N1400 memory.pdf
Solo gestori archivio
Tipologia:
versione editoriale (VoR)
Dimensione
1.39 MB
Formato
Adobe PDF
|
1.39 MB | Adobe PDF | Visualizza/Apri Richiedi una copia |
|
Flexible Memories airstable.pdf
Open Access dal 02/04/2017
Tipologia:
versione post-print (AAM)
Dimensione
993.86 kB
Formato
Adobe PDF
|
993.86 kB | Adobe PDF | Visualizza/Apri |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
