Using self-consistent tight-binding calculations, we show that modulation doping can be used to screen macroscopic polarization fields in nitride quantum wells. The blue-shift of photoluminescence peak as well as the reduction of radiative recombination lifetime at increasing doping density is explained and correlated to polarization-field screening. The field-induced ionization of the dopants and its relation with alloy composition in the heterostructure barriers is also analyzed. (C) 2000 American Institute of Physics. [S0003-6951(00)05026-9].

Doping screening of polarization fields in nitride heterostructures

FIORENTINI, VINCENZO;BERNARDINI, FABIO
2000-01-01

Abstract

Using self-consistent tight-binding calculations, we show that modulation doping can be used to screen macroscopic polarization fields in nitride quantum wells. The blue-shift of photoluminescence peak as well as the reduction of radiative recombination lifetime at increasing doping density is explained and correlated to polarization-field screening. The field-induced ionization of the dopants and its relation with alloy composition in the heterostructure barriers is also analyzed. (C) 2000 American Institute of Physics. [S0003-6951(00)05026-9].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11584/91548
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