Macroscopic polarization, both of intrinsic and piezoelectric nature, is unusually strong in III-V nitrides, and the built-in electric fields in the layers of nitride-based nanostructures, stemming from polarization changes at heterointerfaces, have a major impact on the properties of single and multiple quantum wells, high mobility transistors, and thin films. The concepts involved in the theory and applications of polarization in nitrides have encountered some resistance in the field. Here we discuss critically 10 "propositions" aimed at clarifying the main controversial issues. (C) 2000 Elsevier Science B.V. All rights reserved.
Polarization fields in nitride nanostructures: 10 points to think about
BERNARDINI, FABIO;FIORENTINI, VINCENZO
2000-01-01
Abstract
Macroscopic polarization, both of intrinsic and piezoelectric nature, is unusually strong in III-V nitrides, and the built-in electric fields in the layers of nitride-based nanostructures, stemming from polarization changes at heterointerfaces, have a major impact on the properties of single and multiple quantum wells, high mobility transistors, and thin films. The concepts involved in the theory and applications of polarization in nitrides have encountered some resistance in the field. Here we discuss critically 10 "propositions" aimed at clarifying the main controversial issues. (C) 2000 Elsevier Science B.V. All rights reserved.
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