Thermomagnetic behavior of a semiconductor material heated by pulsed excitation based on the fourth-order MGT photothermal model

This article proposes a photothermal model to reveal the thermo-magneto-mechanical properties of semiconductor materials, including coupled diffusion equations for thermal conductivity, elasticity, and excess carrier density. The proposed model is developed to account for the optical heating that occurs through the semiconductor medium. The Moore–Gibson–Thompson (MGT) equation of the fourth-order serves as the theoretical framework to establish the photothermal model. It is well-known that the optical and heat transfer properties of such materials behave as random functions of photoexcited-carrier density; therefore, the current model is remarkably more reliable compared to the earlier closed-form theories which are limited to a single form. The constructed theoretical framework is able to investigate the magneto-photo-thermoelastic problems in a semiconductor medium due to laser pulse excitation as a case study. Some parametric studies are used to exhibit the impact of thermal parameters, electromagnetic fields, laser pulses and thermoelectric coupling factors on the thermomagnetic behavior of physical variables. Finally, several numerical examples have been presented to draw the distributions of the examined field variables.