First principles calculations of the impact of Te local doping on the effective work function of a Mo/HfO(2) interface are presented. The undoped interface has a p-type effective work function. We find that interstitial Te and Te in the metal both make the effective work function more p-type. More importantly, Te substituting for O or Hf in the dielectric near the interface-energetically stable for all growth conditions-decreases the effective work function, making it more n-type. (c) 2008 American Institute of Physics.
Te-induced modulation of the Mo/HfO(2) interface effective work function
DELUGAS, PIETRO DAVIDE;FIORENTINI, VINCENZO;
2008-01-01
Abstract
First principles calculations of the impact of Te local doping on the effective work function of a Mo/HfO(2) interface are presented. The undoped interface has a p-type effective work function. We find that interstitial Te and Te in the metal both make the effective work function more p-type. More importantly, Te substituting for O or Hf in the dielectric near the interface-energetically stable for all growth conditions-decreases the effective work function, making it more n-type. (c) 2008 American Institute of Physics.
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