First principles calculations of the impact of Te local doping on the effective work function of a Mo/HfO(2) interface are presented. The undoped interface has a p-type effective work function. We find that interstitial Te and Te in the metal both make the effective work function more p-type. More importantly, Te substituting for O or Hf in the dielectric near the interface-energetically stable for all growth conditions-decreases the effective work function, making it more n-type. (c) 2008 American Institute of Physics.
Te-induced modulation of the Mo/HfO(2) interface effective work function
DELUGAS, PIETRO DAVIDE;FIORENTINI, VINCENZO;
2008-01-01
Abstract
First principles calculations of the impact of Te local doping on the effective work function of a Mo/HfO(2) interface are presented. The undoped interface has a p-type effective work function. We find that interstitial Te and Te in the metal both make the effective work function more p-type. More importantly, Te substituting for O or Hf in the dielectric near the interface-energetically stable for all growth conditions-decreases the effective work function, making it more n-type. (c) 2008 American Institute of Physics.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
I metadati presenti in IRIS UNICA sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono protetti da diritto d'autore, salvo diversa indicazione.
