MURA, GIOVANNA

MURA, GIOVANNA  

DIPARTIMENTO DI INGEGNERIA ELETTRICA ED ELETTRONICA  

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Risultati 1 - 20 di 80 (tempo di esecuzione: 0.083 secondi).
Titolo Data di pubblicazione Autore(i) Rivista Editore
A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps 1-gen-2012 M., Meneghini; M., Bertin; G., dal Santo; A., Stocco; A., Chini; D., Marcon; P. E., Malinowski; Mura, Giovanna; E., Musu; Vanzi, Massimo; G., Meneghesso; E., Zanoni - -
Accelerated Life Test of High Brightness Light Emitting Diodes 1-gen-2008 L., Trevisanello; M., Meneghini; Mura, Giovanna; Vanzi, Massimo; M., Pavesi; G., Meneghesso; E., Zanoni IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY -
An automated lifetest equipment for optical emitters 1-gen-2002 Giglio, M; Martines, Giovanni; Mura, Giovanna; Podda, Simona; Vanzi, Massimo MICROELECTRONICS RELIABILITY -
Analysis of counterfeit electronics 1-gen-2020 Mura, G.; Murru, R.; Martines, G. MICROELECTRONICS RELIABILITY -
Analysis of Fake Amplifiers 1-gen-2021 Mura, G.; Murru, R.; Martines, G. - IEEE
Analysis of GaN based high-power diode lasers after singular degradation events 1-gen-2017 Mura, Giovanna; Vanzi, Massimo; Hempel, Martin; Tomm, Jens W. PHYSICA STATUS SOLIDI. RAPID RESEARCH LETTERS -
Analysis of RFIC Amplifiers 1-gen-2004 Mura, Giovanna; Vanzi, Massimo; G., Micheletti MICROELECTRONICS RELIABILITY -
Analysis of the degradation of AlGaN-based deep-ultraviolet LEDs 1-gen-2009 Meneghesso, G; Meneghini, M; Trivellin, N; Rodighiero, L; Mura, Giovanna; Vanzi, Massimo; Zanoni, E. - -
Analytical model for the I-V characteristics of fresh and degraded commercial LEDs 1-gen-2017 Mura, G.; MIRANDA CASTELLANO, ENRIQUE ALBERTO - -
Are Soft-Breakdown and Hard-Breakdown of thin gate oxides actually different failure mechanism 1-gen-2000 J., Suñè; Mura, Giovanna; E., Miranda IEEE ELECTRON DEVICE LETTERS -
Backside Failure Analysis of GaAs ICs after EDS tests 1-gen-2002 Meneghesso, G; Cocco, A; Mura, Giovanna; Podda, Simona; Vanzi, Massimo MICROELECTRONICS RELIABILITY -
Brightness InGaN LEDs degradation at high injection current bias 1-gen-2006 Levada, S; Meneghini, M; Zanoni, E; Buso, S; Spiazzi, G; Meneghesso, G; Podda, S; Mura, Giovanna; Vanzi, Massimo - -
Catastrophic Optical Damage of GaN-Based Diode Lasers: Sequence of Events, Damage Pattern, and Comparison with GaAs-Based Devices 1-gen-2018 Tomm, Jens W.; Kernke, Robert; Mura, Giovanna; Vanzi, Massimo; Hempel, Martin; Acklin, Bruno JOURNAL OF ELECTRONIC MATERIALS -
CdTe solar cells: technology, operation and reliability 1-gen-2021 Barbato, M.; Artegiani, E.; Bertoncello, M.; Meneghini, M.; Trivellin, N.; Mantoan, E.; Romeo, A.; Mura, G.; Ortolani, L.; Zanoni, E.; Meneghesso, G. JOURNAL OF PHYSICS D. APPLIED PHYSICS -
Chip and package-related degradation of high power white LEDs 1-gen-2012 Meneghini, M; Dal Lago, M; Trivellin, N; Mura, Giovanna; Vanzi, Massimo; Menegnesso, G; Zanoni, E. MICROELECTRONICS RELIABILITY -
Clamp voltage and ideality factor in laser diodes 1-gen-2015 Vanzi, Massimo; Mura, Giovanna; Marcello, Giulia; Martines, Giovanni MICROELECTRONICS RELIABILITY -
Comparison of catastrophic optical damage events in GaAs- and GaN-based diode lasers 1-gen-2017 Tomm, J. W.; Kernke, R.; Mura, G.; Vanzi, M.; Hempel, M. - IEEE (Institute of Electrical and Electronics Engineers)
CUBESATS: PAVING THE WAY TOWARDS AN EFFECTIVE RELIABILITY – ORIENTED APPROACH 1-gen-2021 Mura, Giovanna; Fois, Gabriele - AIT Series Trends in earth observation Volume 2
DC parameters for laser diodes from experimental curves 1-gen-2011 Vanzi, Massimo; Mura, Giovanna; Martines, Giovanni MICROELECTRONICS RELIABILITY Elsevier
Degradation mechanisms and lifetime of state-of-the-art green laser diodes 1-gen-2015 Marioli, M; Meneghini, M; Rossi, F; Salviati, G; de Santi, C; Mura, Giovanna; Meneghesso, G; Zanoni, E. PHYSICA STATUS SOLIDI. A, APPLICATIONS AND MATERIALS SCIENCE -