Time evolving alterations have been observed in DFB and VCSEL laser diodes after 3MeV proton irradiation. Kinetics are consistent with a diffusion process. The calculated and measured turning point for the alterations in the VCSEL allows to estimate the diffusion coefficient for the moving species. It results close to the known diffusion coefficient for H atoms in semiconductor crystals.
Proton irradiation effects on commercial laser diodes
MARCELLO, GIULIA;MURA, GIOVANNA;VANZI, MASSIMO;
2015-01-01
Abstract
Time evolving alterations have been observed in DFB and VCSEL laser diodes after 3MeV proton irradiation. Kinetics are consistent with a diffusion process. The calculated and measured turning point for the alterations in the VCSEL allows to estimate the diffusion coefficient for the moving species. It results close to the known diffusion coefficient for H atoms in semiconductor crystals.
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