UNICA IRIS Institutional Research Information System

MARTINES, GIOVANNI
 Distribuzione geografica
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Continente #
EU - Europa 59.979
NA - Nord America 2.721
AS - Asia 407
OC - Oceania 2
SA - Sud America 2
AF - Africa 1
Continente sconosciuto - Info sul continente non disponibili 1
Totale 63.113
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Nazione #
IT - Italia 59.159
US - Stati Uniti d'America 2.714
UA - Ucraina 288
CN - Cina 280
SE - Svezia 191
GB - Regno Unito 114
SG - Singapore 84
FI - Finlandia 76
DE - Germania 67
FR - Francia 40
IN - India 25
BE - Belgio 14
RU - Federazione Russa 14
CA - Canada 7
IQ - Iraq 4
IR - Iran 4
NL - Olanda 4
IE - Irlanda 3
JP - Giappone 3
AT - Austria 2
AU - Australia 2
CZ - Repubblica Ceca 2
UZ - Uzbekistan 2
BG - Bulgaria 1
CH - Svizzera 1
EC - Ecuador 1
EU - Europa 1
GE - Georgia 1
GR - Grecia 1
HK - Hong Kong 1
LK - Sri Lanka 1
MU - Mauritius 1
MY - Malesia 1
PE - Perù 1
PT - Portogallo 1
RO - Romania 1
VN - Vietnam 1
Totale 63.113
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Città #
Cagliari 57.475
Uta 1.471
Chandler 353
Fairfield 274
Houston 230
Woodbridge 219
Ann Arbor 209
Ashburn 196
Boardman 175
Jacksonville 160
Nyköping 140
Seattle 128
Wilmington 115
Cambridge 111
Dearborn 54
Singapore 53
Santa Clara 52
Beijing 51
Nanjing 46
Boston 44
Milan 37
Shanghai 37
Helsinki 33
Los Angeles 22
Pune 20
Sassari 17
Redwood City 16
Verona 16
Changsha 15
Hebei 15
Shenyang 14
Nanchang 12
San Diego 12
Brussels 11
Jiaxing 11
Washington 10
Ningbo 9
Selargius 9
Guangzhou 8
Les Lilas 8
Tianjin 8
Auburn Hills 7
Bologna 7
Jinan 7
Wuhan 7
Benetutti 6
Orange 6
London 5
Munich 5
Ploaghe 5
Scorzè 5
Frascati 4
Fuzhou 4
Norwalk 4
San Francisco 4
Frankfurt am Main 3
Lucca 3
Monmouth Junction 3
Pavia 3
Tertenìa 3
Toronto 3
Zhengzhou 3
Ardabil 2
Assèmini 2
Atlanta 2
Chicago 2
Dublin 2
Escalaplano 2
Grays 2
Guasila 2
Guspini 2
Hangzhou 2
Jinhua 2
Leuven 2
Mumbai 2
Phoenix 2
Saint Petersburg 2
Tashkent 2
Vienna 2
Walnut 2
Amsterdam 1
Annemasse 1
Athens 1
Augusta 1
Belfast 1
Bonn 1
Bordeaux 1
Brno 1
Callao 1
Calonne-ricouart 1
Capoterra 1
Cedar Knolls 1
Dallas 1
Dambulla 1
Edinburgh 1
Guayaquil 1
Hanoi 1
Hefei 1
Heze 1
Hong Kong 1
Totale 62.049
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Nome #
Ultra-low voltage, self-aligned OTFTs for frequency applications 14.413
Clamp voltage and ideality factor in laser diodes 3.046
Further improvements of an extended Hakki-Paoli method 2.038
DC parameters for laser diodes from experimental curves 1.925
External cavity ITLA degradation 1.844
An automated lifetest equipment for optical emitters 1.631
Charge diffusion and reciprocity theorems: A direct approach to EBIC of ridge laser diodes 1.312
A simpler method for life-testing laser diodes 1.299
A novel approach to determine the start-up conditions in microwave negative impedance oscillator design 1.299
Proposal of up-to-date standards on methods of measuring noise in linear two-ports 1.236
Full characterization of low-noise HEMTs using only noise figure measurements 1.132
A global approach to the noise and small-signal characterization of microwave field-effect transistors 1.114
CAD-oriented modeling of pseudomorphic HEMTs from simultaneous noise and scattering measurements 1.111
Noisy characterization for CAD-oriented modeling of a pseudomorphic HEMT series versus frequency and temperature 1.109
The determination of noise, gain and scattering parameters of microwave transistors (HEMTs) using only an automatic noise figure test-set 1.102
Statistical modeling of pseudomorphic HEMTs from automated noise and scattering parameter measurements 1.084
DC, low frequency and RF drift in AlGaAs/InGaAs PM-HEMTs biased in high field and high power dissipation regime 1.083
Failure mechanisms of Schottky gate contact degradation and deep traps creation in AlGaAs/InGaAs PM-HEMT’s submitted to accelerated life tests 1.016
A method for measurement of losses in the noise-matching microwave network while measuring transistor noise parameters 1.000
CAD-oriented modeling of low-noise HEMTs 993
Automatic characterization and modeling of microwave low noise HEMTs 978
Automatic characterization and modeling of microwave low-noise HEMTs 959
Failure mechanisms of Schottky gate contact degradation and deep traps creation in AlGaAs/InGaAs PM-HEMT submitted to accelerated life tests 956
An automated measuring system for the simultaneous determination of noise, gain and scattering parameters of HEMTs 954
HEMT for Low Noise Microwaves: CAD Oriented Modeling 933
CAD-oriented HEMT models from noise and scattering measurements 919
Merit Figures of Low Noise HEMTs from Complete Characterization 912
An automated test-set for the complete characterization on low noise microwave transistors 901
Simultaneous determination of transistor noise, gain and scattering parameters for amplifier design through noise figure measurements only 901
A new automated test-set for the characterization of low-noise devices in terms of noise, gain and scattering parameters 887
Computer-controlled complete characterization of low noise microwave transistors 877
A computer-assisted noise parameter test-set for the characterization of microwave transistors in terms of noise, gain and scattering parameters 867
Automated test-set for accurate measurements of minimum noise figure of GaAs FETs 833
A computer-controlled test-set for the complete characterization of GaAs low noise devices 828
Comments on `A method for measurement of losses in the noise-matching microwave network while measuring transistor noise parameters' [and reply] 821
Characterization and modeling of low noise HEMTs for microwave radio link 809
A method for measurement of losses in the noise-matching microwave network while measuring transistor noise parameters 783
Complete characterization of GaAs low noise devices through noise figure test-set controlled by computer 779
Characterization of GaAs FET's in terms of noise, gain, and scattering parameters through a noise parameter test set 775
Determination of microwave transistor noise and gain parameters through noise-figure measurements only 766
MMIC-oriented modeling of low-noise HEMTs 747
State-of-art of computer aided characterization of GaAs low noise microwave transistors 732
Simultaneous determination of transistor noise, gain and scattering parameters for amplifier design through noise figure measurements only 731
Comments on 'Simultaneous determination of transistors noise, gain and scattering parameters for amplifiers design through noise figure measurements only'[and reply] 705
Analysis of counterfeit electronics 639
Analysis of Fake Amplifiers 605
Reliability risks from counterfeit electronics 370
Electronic Components Authentication via Physical Analysis 299
Effect of centre volume on pathological outcomes and postoperative complications after surgery for colorectal cancer: results of a multicentre national study 108
The pan - COVID - AGICT study. The impact of COVID-19 pandemic on surgically treated pancreatic cancer patients. A multicentric Italian study 15
Totale 63.176
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Categoria #
all - tutte 73.830
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 73.830
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20207.920 0 0 0 0 3.011 1.853 1.069 648 278 224 383 454
2020/202110.446 627 447 513 2.698 2.232 1.022 1.275 608 208 286 280 250
2021/20223.158 236 262 285 138 171 289 248 227 244 242 356 460
2022/20235.520 418 591 463 480 459 393 205 597 421 489 698 306
2023/20246.489 235 290 331 386 700 1.182 1.295 425 429 270 467 479
2024/202518.292 7.344 2.883 6.452 1.136 477 0 0 0 0 0 0 0
Totale 63.176