UNICA IRIS Institutional Research Information System

MARTINES, GIOVANNI
 Distribuzione geografica
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Continente #
EU - Europa 41.071
NA - Nord America 2.537
AS - Asia 294
OC - Oceania 2
AF - Africa 1
Continente sconosciuto - Info sul continente non disponibili 1
SA - Sud America 1
Totale 43.907
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Nazione #
IT - Italia 40.273
US - Stati Uniti d'America 2.530
UA - Ucraina 288
CN - Cina 238
SE - Svezia 191
GB - Regno Unito 114
FI - Finlandia 76
DE - Germania 60
FR - Francia 31
IN - India 25
SG - Singapore 17
BE - Belgio 14
RU - Federazione Russa 14
CA - Canada 7
IQ - Iraq 4
IR - Iran 4
JP - Giappone 3
NL - Olanda 3
AU - Australia 2
CZ - Repubblica Ceca 2
IE - Irlanda 2
BG - Bulgaria 1
CH - Svizzera 1
EU - Europa 1
LK - Sri Lanka 1
MU - Mauritius 1
MY - Malesia 1
PE - Perù 1
RO - Romania 1
VN - Vietnam 1
Totale 43.907
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Città #
Cagliari 40.107
Chandler 353
Fairfield 274
Houston 230
Woodbridge 219
Ann Arbor 209
Ashburn 189
Jacksonville 160
Nyköping 140
Seattle 128
Wilmington 115
Cambridge 111
Boardman 73
Dearborn 54
Beijing 48
Boston 44
Nanjing 44
Helsinki 33
Milan 31
Shanghai 31
Pune 20
Sassari 17
Redwood City 16
Verona 16
Changsha 15
Hebei 15
Shenyang 14
Nanchang 12
San Diego 12
Brussels 11
Jiaxing 11
Los Angeles 10
Washington 10
Ningbo 9
Tianjin 8
Auburn Hills 7
Guangzhou 7
Jinan 7
Orange 6
London 5
Ploaghe 5
Frascati 4
Norwalk 4
Fuzhou 3
Monmouth Junction 3
San Francisco 3
Tertenìa 3
Toronto 3
Zhengzhou 3
Ardabil 2
Assèmini 2
Atlanta 2
Chicago 2
Escalaplano 2
Grays 2
Guasila 2
Guspini 2
Hangzhou 2
Leuven 2
Mumbai 2
Phoenix 2
Saint Petersburg 2
Walnut 2
Annemasse 1
Augusta 1
Belfast 1
Bologna 1
Bonn 1
Brno 1
Callao 1
Calonne-ricouart 1
Capoterra 1
Cedar Knolls 1
Dallas 1
Dambulla 1
Dublin 1
Edinburgh 1
Frankfurt am Main 1
Hanoi 1
Hefei 1
Islington 1
Kunming 1
Lausanne 1
Leawood 1
Millbury 1
Moscow 1
Palo Alto 1
Perth 1
Redmond 1
Rome 1
Saint-pierre-de-lages 1
San Mateo 1
Shengzhou 1
Shippensburg 1
Sofia 1
Stockholm 1
Sydney 1
Taiyuan 1
Taizhou 1
Tehran 1
Totale 42.917
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Nome #
Clamp voltage and ideality factor in laser diodes 1.891
Ultra-low voltage, self-aligned OTFTs for frequency applications 1.842
Further improvements of an extended Hakki-Paoli method 1.728
DC parameters for laser diodes from experimental curves 1.612
External cavity ITLA degradation 1.456
An automated lifetest equipment for optical emitters 1.454
A novel approach to determine the start-up conditions in microwave negative impedance oscillator design 1.182
A simpler method for life-testing laser diodes 1.181
Proposal of up-to-date standards on methods of measuring noise in linear two-ports 1.166
Charge diffusion and reciprocity theorems: A direct approach to EBIC of ridge laser diodes 1.106
A global approach to the noise and small-signal characterization of microwave field-effect transistors 1.048
CAD-oriented modeling of pseudomorphic HEMTs from simultaneous noise and scattering measurements 1.027
Noisy characterization for CAD-oriented modeling of a pseudomorphic HEMT series versus frequency and temperature 1.026
Full characterization of low-noise HEMTs using only noise figure measurements 1.018
DC, low frequency and RF drift in AlGaAs/InGaAs PM-HEMTs biased in high field and high power dissipation regime 1.010
The determination of noise, gain and scattering parameters of microwave transistors (HEMTs) using only an automatic noise figure test-set 998
Statistical modeling of pseudomorphic HEMTs from automated noise and scattering parameter measurements 984
Failure mechanisms of Schottky gate contact degradation and deep traps creation in AlGaAs/InGaAs PM-HEMT’s submitted to accelerated life tests 945
CAD-oriented modeling of low-noise HEMTs 906
A method for measurement of losses in the noise-matching microwave network while measuring transistor noise parameters 904
Automatic characterization and modeling of microwave low noise HEMTs 904
Failure mechanisms of Schottky gate contact degradation and deep traps creation in AlGaAs/InGaAs PM-HEMT submitted to accelerated life tests 883
Automatic characterization and modeling of microwave low-noise HEMTs 872
An automated measuring system for the simultaneous determination of noise, gain and scattering parameters of HEMTs 869
CAD-oriented HEMT models from noise and scattering measurements 837
HEMT for Low Noise Microwaves: CAD Oriented Modeling 832
A new automated test-set for the characterization of low-noise devices in terms of noise, gain and scattering parameters 829
An automated test-set for the complete characterization on low noise microwave transistors 823
Simultaneous determination of transistor noise, gain and scattering parameters for amplifier design through noise figure measurements only 822
Computer-controlled complete characterization of low noise microwave transistors 807
Merit Figures of Low Noise HEMTs from Complete Characterization 802
A computer-assisted noise parameter test-set for the characterization of microwave transistors in terms of noise, gain and scattering parameters 788
Automated test-set for accurate measurements of minimum noise figure of GaAs FETs 754
Comments on `A method for measurement of losses in the noise-matching microwave network while measuring transistor noise parameters' [and reply] 744
Characterization and modeling of low noise HEMTs for microwave radio link 725
A computer-controlled test-set for the complete characterization of GaAs low noise devices 724
A method for measurement of losses in the noise-matching microwave network while measuring transistor noise parameters 693
Complete characterization of GaAs low noise devices through noise figure test-set controlled by computer 690
Characterization of GaAs FET's in terms of noise, gain, and scattering parameters through a noise parameter test set 689
Determination of microwave transistor noise and gain parameters through noise-figure measurements only 675
MMIC-oriented modeling of low-noise HEMTs 660
State-of-art of computer aided characterization of GaAs low noise microwave transistors 654
Simultaneous determination of transistor noise, gain and scattering parameters for amplifier design through noise figure measurements only 652
Comments on 'Simultaneous determination of transistors noise, gain and scattering parameters for amplifiers design through noise figure measurements only'[and reply] 614
Analysis of counterfeit electronics 474
Analysis of Fake Amplifiers 386
Reliability risks from counterfeit electronics 205
Electronic Components Authentication via Physical Analysis 75
Totale 43.966
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Categoria #
all - tutte 52.354
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 52.354
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019449 0 0 0 0 0 0 0 0 0 0 279 170
2019/20209.032 529 294 51 238 3.011 1.853 1.069 648 278 224 383 454
2020/202110.446 627 447 513 2.698 2.232 1.022 1.275 608 208 286 280 250
2021/20223.158 236 262 285 138 171 289 248 227 244 242 356 460
2022/20235.520 418 591 463 480 459 393 205 597 421 489 698 306
2023/20245.571 235 290 331 386 700 1.182 1.295 425 429 270 28 0
Totale 43.966