Forward and reverse HBM, MM, CDM ESD tests have been performed on 850-nm VCSELs, together with EOS and overpower test. The physical analysis of the tested devices showed a variety of damages not easily correlated to the measured electro-optical degradations. The solution requires the detailed interpretation of the observed physical mechanism, by means of electron microscopy and device modelling.
|Titolo:||ESD tests on 850 nm GaAs-based VCSELs|
|Data di pubblicazione:||2016|
|Tipologia:||1.1 Articolo in rivista|