Forward and reverse HBM, MM, CDM ESD tests have been performed on 850-nm VCSELs, together with EOS and overpower test. The physical analysis of the tested devices showed a variety of damages not easily correlated to the measured electro-optical degradations. The solution requires the detailed interpretation of the observed physical mechanism, by means of electron microscopy and device modelling.

ESD tests on 850 nm GaAs-based VCSELs

VANZI, MASSIMO;MURA, GIOVANNA;MARCELLO, GIULIA;
2016

Abstract

Forward and reverse HBM, MM, CDM ESD tests have been performed on 850-nm VCSELs, together with EOS and overpower test. The physical analysis of the tested devices showed a variety of damages not easily correlated to the measured electro-optical degradations. The solution requires the detailed interpretation of the observed physical mechanism, by means of electron microscopy and device modelling.
ESD; Failure analysis; VCSEL; Electronic, Optical and Magnetic Materials; Atomic and Molecular Physics, and Optics; Condensed Matter Physics; Safety, Risk, Reliability and Quality; Surfaces, Coatings and Films; Electrical and Electronic Engineering
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11584/193260
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