Forward and reverse HBM, MM, CDM ESD tests have been performed on 850-nm VCSELs, together with EOS and overpower test. The physical analysis of the tested devices showed a variety of damages not easily correlated to the measured electro-optical degradations. The solution requires the detailed interpretation of the observed physical mechanism, by means of electron microscopy and device modelling.
ESD tests on 850 nm GaAs-based VCSELs
VANZI, MASSIMO;MURA, GIOVANNA;MARCELLO, GIULIA;
2016-01-01
Abstract
Forward and reverse HBM, MM, CDM ESD tests have been performed on 850-nm VCSELs, together with EOS and overpower test. The physical analysis of the tested devices showed a variety of damages not easily correlated to the measured electro-optical degradations. The solution requires the detailed interpretation of the observed physical mechanism, by means of electron microscopy and device modelling.
File in questo prodotto:
| File | Dimensione | Formato | |
|---|---|---|---|
|
1-s2.0-S0026271416301639-main.pdf
Solo gestori archivio
Tipologia:
versione editoriale
Dimensione
1.35 MB
Formato
Adobe PDF
|
1.35 MB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
